smh op microelectronics c rp. a STP656F features super high dense cell design for low r ds(on) . rugged and reliable. to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw dec,01,2010 1 details are subject to change without notice. s g d ver 1.0 product summary v dss i d r ds(on) (m ) max 60v 22a 29 @ vgs=4.5v 19 @ vgs=10v gds stf series to-220f g r p p r p p symbol v ds v gs i dm e as 6 65 w a p d c 21 -55 to 150 i d units parameter 60 22 66 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 182 mj absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja a 17.7 t c =70 c t c =70 c 13.3 w a a o
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss pf c oss pf c rss pf q g nc t d(on) ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =11a v ds =20v , i d =11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =48v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =9a m ohm c f=1.0mhz c STP656F www.samhop.com.tw dec,01,2010 2 v sd nc q gs nc q gd gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =11a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a v notes nc v ds =30v,i d =11a,v gs =10v v ds =30v,i d =11a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _ 1 ver 1.0 15 2180 196 132 40 47 65 37 34 19 21 29 4 9 0.76 1.3 17 1 1.8 3 31
f igure 1. output c haracteris tics figure 2. transfer characteristics v gs , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain current(a) i d , drain c urrent (a) i d , drain c urrent (a) r ds (on) ( m ) f igure 3. on-r es is tance vs . drain c urrent and gate voltage f igure 4. on-r es is tance variation with drain c urrent and temperature on-resistance r ds (on) , tj( c) t j, j unction t emperature ( c ) f igure 6. b reakdown v oltage v ariation with t emperature vth, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) f igure 5. g ate t hreshold v ariation with t emperature STP656F ver 1.0 www.samhop.com.tw dec,01,2010 3 40 32 24 16 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 3.5v v gs = 4v v gs = 4.5v v gs = 10v 60 48 36 24 12 0 0 0.9 5.4 4.5 3.6 2.7 1.8 25 c -55 c tj=125 c 60 50 40 30 20 10 1 1 v gs =10v v gs =4.5v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =11a v gs =4.5v i d =9a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.30 1.20 1.10 1.00 0.90 0.80 0.70 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs = 5v 816243240
STP656F ver 1.0 www.samhop.com.tw dec,01,2010 4 0.1 1 10 60 10 1 0.1 0.03 100 v gs =10v single pulse t a =25 c r ds ( on) limit dc 1 0 m s 1m s 100us r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 10us 60 50 40 30 20 10 0 24 68 10 0 i d =11a 25 c 75 c 125 c 10 1 60 0 0.25 0.50 0.75 1.00 1.25 75 c 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 css 10 8 6 4 2 0 0510 15 20 25 30 35 40 v ds =30v i d =11a 110 100 1 10 100 300 vds=30v,id=1a vgs=10v td(on) tr tf td(off ) 125 c 25 c is, source-drain current(a) css i css o r
t p v (br )dss i as f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 transient thermal impedance s quare wave p ulse duration (msec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective STP656F ver 1.0 www.samhop.com.tw dec,01,2010 5 d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STP656F ver 1.0 www.samhop.com.tw dec,01,2010 6 e # # . % . d . . ' h d g i j f o a a1 b b1 c c2 e l1 l2 l4 l5 o e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70
STP656F ver 1.0 www.samhop.com.tw dec,01,2010 7 f tube
|
